(China (Mainland))
Product Summary
The FP100R06KE3 is an IGBT module.
Parametrics
FP100R06KE3 maximum rated values: (1)collector-emitter voltage at Tvj=25℃, VCES: 600v; (2)DC-collector current at TC=80℃, Tvj=175℃, ICnom: 100A; (3)repetitive peak collector current at tp=1ms, ICRM: 200A; (4)total power dissipation at TC=25℃, Tvj=175℃, Ptot: 335w; (5)gate-emitter peak voltage, VGES: +/-20v.
Features
FP100R06KE3 characteristics: (1)collector-emitter saturation voltage at IC=100A, VGE=15V, at Tvj=25℃, VCEsat: 1.45v typ, 1.9v max ; (2)collector-emitter saturation voltage at IC=100A, VGE=15V, at Tvj=125℃, VCEsat: 1.60v typ; (3)collector-emitter saturation voltage at IC=100A, VGE=15V, at Tvj=150℃, VCEsat: 1.70v typ; (4)gate threshold voltage at IC=1.6mA, VCE=VGE, Tvj=25℃, VGEth: 4.9v min, 5.8v typ, 6.5 v max; (5)gate charge at VGE=-15V to 15v, QG: 100uC; (6)internal gate resistor at Tvj=25℃, RGint: 2 Ω; (7)input capacitance at f=1MHZ, Tvj=25℃, VCE=25V, VGE=0V, Cies: 6.2nF; (8)reverse transfer capacitance at f=1MHZ, Tvj=25℃, VCE=25V, VGE=0V, Cres0.19nF.
Diagrams
| Image | Part No | Mfg | Description |  |
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 FP100R06KE3 |
Infineon Technologies |
IGBT Modules N-CH 600V 100A |
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