Product Summary

The BSM25GD120DN2E3224 is an IGBT Power Module.

Parametrics

BSM25GD120DN2E3224 absolute maximum ratings: (1)Collector-emitter voltage, VCE: 1200 V; (2)Collector-gate voltage RGE = 20 kW, VCGR: 1200V; (3)Gate-emitter voltage, VGE: ±20V; (4)DC collector current, IC: 35A when TC = 25℃; 25A when TC = 80℃; (5)Pulsed collector current, tp = 1 ms, ICpuls: 70A when TC = 25℃; 50A when TC = 80℃; (6)Power dissipation per IGBT TC = 25℃, Ptot: 200W; (7)Chip temperature, Tj: + 150℃; (8)Storage temperature, Tstg: -40 to +125℃; (9)Thermal resistance, chip case RthJC: ≤0.6 K/W; (10)Diode thermal resistance, chip case, RthJCD: ≤ 1K/W; (11)Insulation test voltage, t = 1min, Vis: 2500 Vac; (12)Creepage distance: 16 mm; (13)Clearance: 11mm; (14)DIN humidity category, DIN 40 040: F sec; (15)IEC climatic category, DIN IEC 68-1: 40/125/56 sec.

Features

BSM25GD120DN2E3224 features: (1)Power module; (2)3-phase full-bridge; (3)Including fast free-wheel diodes; (4)Package with insulated metal base plate.

Diagrams

BSM25GD120DN2E3224 diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BSM25GD120DN2E3224
BSM25GD120DN2E3224
Infineon Technologies
IGBT Modules N-CH 1.2KV 35A
Data Sheet
0-1: $47.80
1-5: $45.41
5-10: $43.01
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BSM200GA120DN2FS
BSM200GA120DN2FS
Infineon Technologies
IGBT Modules IGBT 1200V 200A
Data Sheet
0-6: $72.00
6-10: $65.40
BSM200GA120DN2S_E3256
BSM200GA120DN2S_E3256
Infineon Technologies
IGBT Modules IGBT 1200V 200A
Data Sheet
0-6: $79.20
6-10: $71.40
BSM200GB120DN2
BSM200GB120DN2
Infineon Technologies
IGBT Modules 1200V 200A DUAL
Data Sheet
0-1: $99.26
1-5: $94.30
5-10: $89.34
BSM200GA170DN2S
BSM200GA170DN2S
Infineon Technologies
IGBT Modules N-CH 1.7KV 290A
Data Sheet
0-6: $101.41
6-10: $91.27
BSM200GAL120DLC
BSM200GAL120DLC
Infineon Technologies
IGBT Modules 1200V 200A CHOPPER
Data Sheet
Negotiable 
BSM200GB120 DL
BSM200GB120 DL
Other

Data Sheet
Negotiable